Technical parameters/rated voltage (DC): 1.00 kV
Technical parameters/rated current: 2.00 A
Technical parameters/capacitors: 25.0 pF
Technical parameters/output current: ≤2.00 A
Technical parameters/forward voltage: 1.1V @3.14A
Technical parameters/forward current (Max): 2 A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: SIP-4
External dimensions/packaging: SIP-4
Physical parameters/operating temperature: -55℃ ~ 165℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2KBP10M-E4/51
|
General Instrument | 功能相似 |
VISHAY 2KBP10M-E4/51. 二极管 桥式整流, 单相, 1 kV, 2 A, SIP, 1.1 V, 4 引脚
|
|||
2KBP10M-E4/51
|
General Semiconductor | 功能相似 |
VISHAY 2KBP10M-E4/51. 二极管 桥式整流, 单相, 1 kV, 2 A, SIP, 1.1 V, 4 引脚
|
|||
3N259-E4/51
|
VISHAY | 完全替代 | SIP-4 |
DIODE 2A, 1000V, SILICON, BRIDGE RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, CASE KBPM, 4Pin, Bridge Rectifier Diode
|
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