Technical parameters/rated voltage (DC): 9.10 V
Technical parameters/working voltage: 6 V
Technical parameters/rated power: 24.0 W
Technical parameters/breakdown voltage: 8.65 V|8.65 V
Technical parameters/number of pins: 3
Technical parameters/forward voltage: 0.9 V
Technical parameters/dissipated power: 24 W
Technical parameters/clamp voltage: 14 V
Technical parameters/test current: 1 mA
Technical parameters/maximum reverse breakdown voltage: 9.56 V
Technical parameters/peak pulse power: 24 W
Technical parameters/minimum reverse breakdown voltage: 8.65 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: -55℃ ~ 150℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.04 mm
External dimensions/width: 1.4 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Medical, Industrial, Automotive, Industrial, Medical, Computers&Computer Peripherals, Communications and Networks, Computers and Computer Peripherals, Communications&Networking
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2016/06/20
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBZ15VALT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBZ15VALT1G TVS二极管, TVS, MMBZ系列, 单向, 12 V, 21 V, SOT-23, 3 引脚
|
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