Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): 50V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): 45V
Other/Collector Continuous Output Current (IC): 500mA/0.5A
Other/Cut off Frequency fTTransmission Frequency (fT): 200MHz
Other/DC current gain hFEDC Current Gain (hFE): 100~600
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: 620mV/0.62V
Other/dissipated power PcPower Dissipation: 330mW/0.33W
Other/Specification PDF: __
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC817,215
|
Nexperia | 功能相似 | SOT-23-3 |
BC817 系列 45 V 500 mA 表面贴装 NPN 通用 晶体管 - SOT-23-3
|
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SBC817-16LT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
NPN 晶体管，ON Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
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