Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 4.20 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/product series: IRF7478
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/Continuous drain current (Ids): 4.20 A
Technical parameters/rise time: 2.60 ns
Technical parameters/Input capacitance (Ciss): 1740pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS4480
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4480 晶体管, MOSFET, N沟道, 10.8 A, 40 V, 0.008 ohm, 10 V, 3.9 V
|
||
FDS5690
|
NONE | 功能相似 |
FDS5690 系列 60 V 28 mOhm N 沟道 PowerTrench Mosfet SOIC-8
|
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