Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 11.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/product series: IRF7470
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/Continuous drain current (Ids): 10.0 A
Technical parameters/rise time: 1.9 ns
Technical parameters/Input capacitance (Ciss): 3430pF @20V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 3.2 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS4480
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4480 晶体管, MOSFET, N沟道, 10.8 A, 40 V, 0.008 ohm, 10 V, 3.9 V
|
||
NDS8425
|
ON Semiconductor | 功能相似 | SOIC-8 |
PowerTrench® N 通道 MOSFET，高达 9.9A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
||
NDS8425
|
Fairchild | 功能相似 | SOIC-8 |
PowerTrench® N 通道 MOSFET，高达 9.9A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
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