Technical parameters/rated voltage (DC): 300 V
Technical parameters/rated current: 90.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 33 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 560 W
Technical parameters/drain source voltage (Vds): 300 V
Technical parameters/leakage source breakdown voltage: 300 V
Technical parameters/Continuous drain current (Ids): 90.0 A
Technical parameters/rise time: 55 ns
Technical parameters/Input capacitance (Ciss): 10000pF @25V(Vds)
Technical parameters/descent time: 40 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 560W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 16.13 mm
External dimensions/width: 5.21 mm
External dimensions/height: 21.34 mm
External dimensions/packaging: TO-247-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STY60NK30Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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