Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 1.50 A
Technical parameters/rated power: 0.2 W
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 mW
Technical parameters/gain bandwidth product: 330 MHz
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 1.5A
Technical parameters/minimum current amplification factor (hFE): 270 @100mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 680
Technical parameters/rated power (Max): 200 mW
Technical parameters/DC current gain (hFE): 270
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.6 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
US6X6TR
|
ROHM Semiconductor | 功能相似 | TUMT-6 |
双极晶体管 - 双极结型晶体管(BJT) NPN BIPOLAR 30V 1.5A
|
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