Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 30 @3A, 2V
Technical parameters/rated power (Max): 5 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 5000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3791
|
Central Semiconductor | 完全替代 | TO-3 |
PNP大功率硅晶体管 PNP HIGH POWER SILICON TRANSISTOR
|
||
2N3791
|
ETC | 完全替代 |
PNP大功率硅晶体管 PNP HIGH POWER SILICON TRANSISTOR
|
|||
2N3791
|
Motorola | 完全替代 | TO-3 |
PNP大功率硅晶体管 PNP HIGH POWER SILICON TRANSISTOR
|
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