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Model NCV1413BDR2
Description High Voltage, High Current Darlington Transistor Arrays
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Brand: ON Semiconductor
Packaging SOIC-16
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3998) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 50.0 V

Technical parameters/rated current: 500 mA

Technical parameters/polarity: NPN

Technical parameters/breakdown voltage (collector emitter): 50 V

Technical parameters/maximum allowable collector current: 0.5A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 16

Encapsulation parameters/Encapsulation: SOIC-16

External dimensions/packaging: SOIC-16

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NCV1413BDR2G NCV1413BDR2G ON Semiconductor 完全替代 SOIC-16
NPN 复合晶体管，On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
ULN2003APW ULN2003APW TI 类似代替 TSSOP-16
TEXAS INSTRUMENTS ULN2003APW 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, TSSOP

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