Technical parameters/working voltage: 3.3 V
Technical parameters/breakdown voltage: 4.1 V
Technical parameters/clamp voltage: 11 V
Technical parameters/peak pulse power: 150 W
Technical parameters/minimum reverse breakdown voltage: 4.1 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: MicroSMP
External dimensions/length: 2.3 mm
External dimensions/packaging: MicroSMP
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive grade
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MSP3V3-E3/89A
|
Vishay Semiconductor | 类似代替 | MicroSMP |
ESD Suppressors / TVS Diodes 100W 3.3V Unidirect
|
||
|
|
VISHAY | 类似代替 | Micro |
ESD Suppressors / TVS Diodes 100W 3.3V Unidirect
|
||
MSP3V3-M3/89A
|
Vishay Intertechnology | 类似代替 | MicroSMP |
TRANSZORB® 瞬态电压抑制器,表面安装单向 100W,MSP 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
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||
MSP3V3-M3/89A
|
Vishay Semiconductor | 类似代替 | MicroSMP |
TRANSZORB® 瞬态电压抑制器,表面安装单向 100W,MSP 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
MSP3V3-M3/89A
|
VISHAY | 类似代替 | MicroSMP |
TRANSZORB® 瞬态电压抑制器,表面安装单向 100W,MSP 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
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