Technical parameters/rated power: 2 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.25 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 2.3A
Technical parameters/rise time: 14 ns
Technical parameters/Input capacitance (Ciss): 190pF @15V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/descent time: 6.9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Industrial, Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7104TRPBF
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Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7104TRPBF 双路场效应管, MOSFET, 双P沟道, -2.3 A, -20 V, 0.19 ohm, -10 V, -3 V
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IRF9953TRPBF
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IRF9953TRPBF
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IRF9953TRPBF
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IFC | 类似代替 |
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SI4943BDY-T1-E3
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Vishay Semiconductor | 功能相似 | SOIC-8 |
双P通道20 - V（D -S）的MOSFET Dual P-Channel 20-V (D-S) MOSFET
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