Technical parameters/frequency: 300 MHz
Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 200 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 300
Technical parameters/rated power (Max): 200 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Defense, Industry, Power Management, Military and Aviation, Automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standards/military grade: Yes
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT3904WT1G
|
ON Semiconductor | 功能相似 | SC-70-3 |
ON SEMICONDUCTOR MMBT3904WT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 300 hFE
|
||
MMST3904-7
|
Diodes | 完全替代 | SOT-323-3 |
TRANS NPN 40V 0.2A SC70-3
|
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