Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 3.00 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 128 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 1292pF @100V(Vds)
Technical parameters/rated power (Max): 1.8 W
Technical parameters/descent time: 23 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 3W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDMS2672
|
ON Semiconductor | 类似代替 | Power-56 |
UltraFET® MOSFET，Fairchild Semiconductor UItraFET® Trench MOSFET 组合了在功率转换应用中实现基准效率的特性。 该设备可耐受雪崩模式中的高能量，且二极管展现出非常短的反向恢复时间和积累电荷。 为高频率时的效率、最低 RDS（接通）、低 ESR 和低总栅极电荷和 Miller 栅极电荷进行了优化。 应用：高频直流-直流转换器、开关调节器、电动机驱动器、低电压总线开关和电源管理。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
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