Technical parameters/rated voltage (DC): 7.00 V
Technical parameters/rated current: 10.0 A
Technical parameters/capacitors: 1.00 pF
Technical parameters/output current: ≤60.0 mA
Technical parameters/polarity: Standard
Technical parameters/dissipated power: 225 mW
Technical parameters/dissipated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBD101LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBD101LT1G 小信号肖特基二极管, AEC-Q101, 单, 7 V, 10 mA, 600 mV, 150 °C 新
|
||
MMBD452LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
双热载流子二极管肖特基势垒二极管 Dual Hot−Carrier Diodes Schottky Barrier Diodes
|
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