Technical parameters/rise/fall time: 100ns, 35ns
Technical parameters/number of output interfaces: 2
Technical parameters/dissipated power: 625 mW
Technical parameters/Static current: 180 µA
Technical parameters/rise time: 220 ns
Technical parameters/descent time: 80 ns
Technical parameters/descent time (Max): 80 ns
Technical parameters/rise time (Max): 220 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 625 mW
Technical parameters/power supply voltage: 10V ~ 20V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRS2106SPBF
|
Infineon | 完全替代 | SOIC-8 |
INFINEON IRS2106SPBF 双路驱动器芯片, MOSFET, 高压侧和低压侧, 10V-20V电源, 600mA输出, 200ns延迟, SOIC-8
|
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