Technical parameters/rated power: 0.2 W
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 56 @5mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: UMT-3F
External dimensions/packaging: UMT-3F
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTA124EKAT146
|
ROHM Semiconductor | 完全替代 | SOT-23-3 |
ROHM DTA124EKAT146 单晶体管 双极, 数字式, PNP, 50 V, 250 MHz, 200 mW, 100 mA, 56 hFE
|
||
DTA124EUAFRAT106
|
ROHM Semiconductor | 完全替代 | SOT-323 |
ROHM DTA124EUAFRAT106 晶体管 双极预偏置/数字, AEC-Q101, -50 V, -100 mA, 22 kohm, 22 kohm, 1 电阻比率, SOT-323
|
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