Technical parameters/frequency: 250 MHz
Technical parameters/rated voltage (DC): -25.0 V
Technical parameters/rated current: -200 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.35 W
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 120 @2mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 360
Technical parameters/rated power (Max): 350 mW
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT4126
|
ON Semiconductor | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT4126 双极性晶体管, PNP -25V SOT-23
|
||
MMBT4126
|
Rochester | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT4126 双极性晶体管, PNP -25V SOT-23
|
||
MMBT4126LT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
小信号 PNP 晶体管，ON Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
|
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