Technical parameters/dissipated power: 200 mW
Technical parameters/drain source voltage (Vds): 15 V
Technical parameters/Input capacitance (Ciss): 10pF @5V(Vds)
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: AM tuner RF amplifier, Low-noise amplifier
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK2394-6-TB-E
|
ON Semiconductor | 功能相似 | SOT-23-3 |
N-Channel Junction Silicon FET Low-Noise HF Amplifi er Applications
|
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