Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -7.00 A
Technical parameters/drain source resistance: 23.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/input capacitance: 1.23 nF
Technical parameters/gate charge: 15.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage of gate source: ±25.0 V
Technical parameters/Continuous drain current (Ids): 7.00 A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 1233pF @15V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS4935BZ
|
ON Semiconductor | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4935BZ. 场效应管, MOSFET, P沟道, -30V, SOIC
|
||
FDS4935BZ
|
Fairchild | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4935BZ. 场效应管, MOSFET, P沟道, -30V, SOIC
|
||
FDS4935_NL
|
Fairchild | 功能相似 | SOIC |
Dual 30V P-Channel PowerTrench MOSFET
|
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