Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 1000 @350mA, 2V
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): 20 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/length: 10 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MC1413BDG
|
ON Semiconductor | 类似代替 | SOIC-16 |
ON SEMICONDUCTOR MC1413BDG 双极晶体管阵列, 达林顿, NPN, 2 V, 500 mA, 1000 hFE, SOIC
|
||
MC1413BDR2G
|
ON Semiconductor | 类似代替 | SOIC-16 |
ON SEMICONDUCTOR MC1413BDR2G 晶体管阵列
|
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