Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 400 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 400 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMUN2214LT1
|
ON Semiconductor | 功能相似 | SOT-23 |
Bias Resistor Transistor
|
||
MMUN2214LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
NPN 晶体管，ON Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 数字晶体管，On Semiconductor 配备电阻器的双极性晶体管也称为数字晶体管或偏流电阻器的晶体管，包含一个或两个集成电阻器。 单一系列输入电阻器，或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。
|
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