Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.24 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 625 mW
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 600 mA
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 60pF @10V(Vds)
Technical parameters/rated power (Max): 446 mW
Technical parameters/descent time: 2.4 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-89-3
External dimensions/length: 1.7 mm
External dimensions/width: 0.98 mm
External dimensions/height: 0.78 mm
External dimensions/packaging: SC-89-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTK3134NT1G
|
ON Semiconductor | 功能相似 | SOT-723-3 |
ON SEMICONDUCTOR NTK3134NT1G 晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
|
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