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Model SI1031X-T1-E3
Description MOSFET P-CH 20V 155mA SC-75A
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Brand: Vishay Siliconix
Packaging SC-89-3
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6506) Minimum order quantity(1)
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Technical parameters/drain source resistance: 8.00 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 300mW (Ta)

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/leakage source breakdown voltage: -20.0 V

Technical parameters/breakdown voltage of gate source: ±6.00 V

Technical parameters/dissipated power (Max): 300mW (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SC-89-3

External dimensions/length: 1.6 mm

External dimensions/width: 0.85 mm

External dimensions/height: 0.8 mm

External dimensions/packaging: SC-89-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI1031X-T1-GE3 SI1031X-T1-GE3 Vishay Siliconix 完全替代 SC-89-3
MOSFET 20V 150mA 340mW 8Ω @ 4.5V
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