Technical parameters/rated power: 625 mW
Technical parameters/rise/fall time: 100ns, 35ns
Technical parameters/number of output interfaces: 2
Technical parameters/output voltage: 600 V
Technical parameters/output current: 290.600 mA
Technical parameters/number of channels: 2
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 625 mW
Technical parameters/rise time: 100 ns
Technical parameters/descent time: 35 ns
Technical parameters/descent time (Max): 80 ns
Technical parameters/rise time (Max): 220 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 625 mW
Technical parameters/power supply voltage: 10V ~ 20V
Technical parameters/power supply voltage (Max): 20 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
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|---|---|---|---|---|---|---|
MIC4100YM
|
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MIC4100 系列 3 Ohm 100 V 表面贴装 半桥 MOSFET 驱动器 - SOIC-8L
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MIC4100YM
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Microchip | 功能相似 | SOIC-8 |
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MIC4101YM
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MICROCHIP MIC4101YM 芯片, 场效应管, MOSFET驱动器, 100V, 半桥, TTL, 8SOIC
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MIC4101YM
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