Technical parameters/frequency: 500 kHz
Technical parameters/rated power: 1 W
Technical parameters/number of output interfaces: 1
Technical parameters/output voltage: 16.6 V
Technical parameters/output current: 700 mA
Technical parameters/number of channels: 2
Technical parameters/dissipated power: 1000 mW
Technical parameters/switching frequency: 500 kHz
Technical parameters/input voltage (Max): 27.6 V
Technical parameters/input voltage (Min): 8 V
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -25 ℃
Technical parameters/dissipated power (Max): 1000 mW
Technical parameters/power supply voltage: 14 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/width: 7.11 mm
External dimensions/packaging: DIP-8
Physical parameters/operating temperature: -25℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Each
Other/Manufacturing Applications: -
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRS25401SPBF
|
Infineon | 类似代替 | SOIC-8 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IRS25401SPBF
|
International Rectifier | 类似代替 | SOIC-8 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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