Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 150 mA
Technical parameters/rated power: 350 mW
Technical parameters/output voltage: 11 V
Technical parameters/dissipated power: 300 mW
Technical parameters/thermal resistance: 75℃/W (RθJC)
Technical parameters/operating temperature (Max): 100 ℃
Technical parameters/operating temperature (Min): -50 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -50℃ ~ 100℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6028RLRAG
|
ON Semiconductor | 完全替代 | TO-226-3 |
ON SEMICONDUCTOR 2N6028RLRAG 可编程单结晶体管(PUT), 40V, TO92
|
||
2N6028RLRAG
|
ON Semiconductor | 完全替代 | TO-226-3 |
ON SEMICONDUCTOR 2N6028RLRAG 可编程单结晶体管(PUT), 40V, TO92
|
||
2N6028RLRPG
|
ON Semiconductor | 完全替代 | TO-226-3 |
可编程单结晶体管 Programmable Unijunction Transistor
|
||
2N6028RLRPG
|
Freescale | 完全替代 | TO-92 |
可编程单结晶体管 Programmable Unijunction Transistor
|
||
|
2N6028RLRPG
|
NXP | 完全替代 | TO-92 |
可编程单结晶体管 Programmable Unijunction Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review