Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 9.00 A
Technical parameters/drain source resistance: 800 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 44 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 9.00 A
Technical parameters/Input capacitance (Ciss): 1030pF @25V(Vds)
Technical parameters/rated power (Max): 44 W
Technical parameters/dissipated power (Max): 44 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQPF9N50C
|
Fairchild | 功能相似 | TO-220-3 |
500V N沟道MOSFET 500V N-Channel MOSFET
|
||
FQPF9N50C
|
ON Semiconductor | 功能相似 | TO-220-3 |
500V N沟道MOSFET 500V N-Channel MOSFET
|
||
FQPF9N50C
|
Freescale | 功能相似 |
500V N沟道MOSFET 500V N-Channel MOSFET
|
|||
STF10NK50Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STF10NK50Z 晶体管, MOSFET, N沟道, 4.5 A, 500 V, 550 mohm, 10 V, 3.75 V
|
||
STP9NK50ZFP
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review