Technical parameters/power supply voltage (DC): 5.00 V, 5.50 V (max)
Technical parameters/clock frequency: 400 kHz, 400 kHz (max)
Technical parameters/access time: 400 ms
Technical parameters/memory capacity: 2000 B
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/packaging: DIP-8
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IS24C02-3PI
|
Integrated Silicon Solution | 功能相似 | DIP |
1Kbit/2Kbit/4Kbit/8Kbit/16Kbit 2-WIRE SERIAL CMOS EEPROM
|
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