Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 3.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 12.5 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 50
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 12500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-225
External dimensions/packaging: TO-225
Physical parameters/materials: Silicon
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Box
Other/Minimum Packaging: 500
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJE181G
|
ON Semiconductor | 功能相似 | TO-126-3 |
ON SEMICONDUCTOR MJE181G. 射频双极晶体管
|
||
MJE182
|
Fairchild | 功能相似 | 3 |
t-Npn Si- Af Po
|
||
MJE182
|
ON Semiconductor | 功能相似 | TO-225 |
t-Npn Si- Af Po
|
||
|
|
NTE Electronics | 功能相似 |
t-Npn Si- Af Po
|
|||
MJE182
|
Motorola | 功能相似 |
t-Npn Si- Af Po
|
|||
MJE182
|
ST Microelectronics | 功能相似 | TO-126-3 |
t-Npn Si- Af Po
|
||
|
|
Central Semiconductor | 功能相似 | TO-126 |
TO-126 NPN 80V 3A
|
||
MJE182STU
|
ON Semiconductor | 功能相似 | TO-126-3 |
ON Semiconductor MJE182STU , NPN 晶体管, 3 A, Vce=80 V, HFE:12, 0.1 MHz, 3引脚 TO-126封装
|
||
MJE270G
|
ON Semiconductor | 功能相似 | TO-225-3 |
MJE 系列 100 V 2 A NPN 互补 硅 功率晶体管 - TO-225
|
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