Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 56 @5mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/DC current gain (hFE): 56
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 200 MHz
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTC144EKAT146
|
Ricoh | 类似代替 | SOT-346 |
ROHM DTC144EKAT146 单晶体管 双极, 数字式, NPN, 50 V, 250 MHz, 200 mW, 100 mA, 68 hFE
|
||
DTC144EMT2L
|
ROHM Semiconductor | 类似代替 | VMT-3 |
双电阻器数字 NPN 晶体管，ROHM ### Digital Transistors, ROHM Resistor-equipped bipolar transistors, also known as Digital Transistors or Bias Resistor Transistors, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.
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