Technical parameters/polarity: NPN
Technical parameters/dissipated power: 10 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/DC current gain (hFE): 50
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-202
External dimensions/packaging: TO-202
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
Customs information/HTS code: 85412900951
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJE180STU
|
Fairchild | 功能相似 | TO-126-3 |
功率 NPN 晶体管,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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Philips | 类似代替 | SOT-78 |
NXP ### 双极性晶体管,NXP Semiconductors
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PHE13005
|
We En Semiconductor | 类似代替 | TO-220 |
NXP ### 双极性晶体管,NXP Semiconductors
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PHE13005
|
NXP | 类似代替 | TO-220 |
NXP ### 双极性晶体管,NXP Semiconductors
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