Technical parameters/power supply voltage (DC): 4.50V (min)
Technical parameters/rise/fall time: 7ns, 1.5ns
Technical parameters/number of output interfaces: 2
Technical parameters/number of pins: 12
Technical parameters/rise time: 4 ns
Technical parameters/descent time: 4 ns
Technical parameters/descent time (Max): 4 ns
Technical parameters/rise time (Max): 4 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.5 V
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 12
Encapsulation parameters/Encapsulation: WFBGA-12
External dimensions/packaging: WFBGA-12
Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LM5113SDX/NOPB
|
TI | 类似代替 | WSON-10 |
LM5113 5A , 100V半桥栅极驱动器的增强型GaN FET的 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
|
||
LM5113TMX/NOPB
|
TI | 完全替代 | DSBGA-12 |
LM5113 5A , 100V半桥栅极驱动器的增强型GaN FET的 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
|
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