Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 5 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.24 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 88.0 A
Technical parameters/Input capacitance (Ciss): 2865pF @12V(Vds)
Technical parameters/rated power (Max): 1.35 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1.41W (Ta), 79W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.73 mm
External dimensions/width: 2.38 mm
External dimensions/height: 6.22 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD4805N-1G
|
ON Semiconductor | 类似代替 | TO-251-3 |
30V,88A,N沟道MOSFET
|
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