Technical parameters/rated voltage (DC): 36.0 V
Technical parameters/working voltage: 36 V
Technical parameters/rated power: 1.50 kW
Technical parameters/breakdown voltage: 40 V
Technical parameters/dissipated power: 1.50 kW
Technical parameters/clamp voltage: 58.1 V
Technical parameters/Maximum reverse voltage (Vrrm): 36V
Technical parameters/test current: 1 mA
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 40 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: -65℃ ~ 150℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AB-2
External dimensions/length: 7.11 mm
External dimensions/width: 6.10 mm
External dimensions/height: 2.41 mm
External dimensions/packaging: DO-214AB-2
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1SMC36AT3G
|
ON Semiconductor | 完全替代 | DO-214AB |
1500W 齐纳瞬态电压抑制器（单向） SMC 系列设计用于保护电压敏感组件抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率 − 1500W @ 1.0ms 3 类 ESD 等级> (16kV)/人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B，用于隔离回路保护 指定了最大温度系数 响应时间通常为 ### 瞬态电压抑制器，On Semiconductor
|
||
1SMC36AT3G
|
Littelfuse | 完全替代 | SMC |
1500W 齐纳瞬态电压抑制器（单向） SMC 系列设计用于保护电压敏感组件抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率 − 1500W @ 1.0ms 3 类 ESD 等级> (16kV)/人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B，用于隔离回路保护 指定了最大温度系数 响应时间通常为 ### 瞬态电压抑制器，On Semiconductor
|
||
SZ1SMC36AT3G
|
ON Semiconductor | 类似代替 | SMC |
SMC 36V 1500W
|
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