Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 6.2 V
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-7
External dimensions/packaging: DO-7
Other/Packaging Methods: Each
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N823
|
American Power Devices | 完全替代 | DO-204AA |
6.2与6.55伏温度补偿齐纳二极管基准二极管 6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
1N825A
|
Solid State | 完全替代 |
温度补偿齐纳二极管基准二极管 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
|||
1N825A
|
American Power Devices | 完全替代 | DO-7 |
温度补偿齐纳二极管基准二极管 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
1N825A
|
Central Semiconductor | 完全替代 | DO-35 |
温度补偿齐纳二极管基准二极管 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
1N825A
|
NJS | 完全替代 |
温度补偿齐纳二极管基准二极管 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
|||
1N825A
|
Microsemi | 完全替代 | DO-7 |
温度补偿齐纳二极管基准二极管 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
|
|
NJS | 完全替代 | 2 |
6.2与6.55伏温度补偿齐纳二极管基准二极管 6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
1N829A
|
Central Semiconductor | 完全替代 | DO-35 |
6.2与6.55伏温度补偿齐纳二极管基准二极管 6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review