Technical parameters/forward voltage: 1.5V @1A
Technical parameters/dissipated power: 64000 mW
Technical parameters/reverse recovery time: 0 ns
Technical parameters/forward current: 1 A
Technical parameters/forward current (Max): 4 A
Technical parameters/operating temperature (Max): 210 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: -55℃ ~ 210℃
Technical parameters/working junction temperature (Max): 250 ℃
Technical parameters/dissipated power (Max): 64000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-276
External dimensions/height: 2.61 mm
External dimensions/packaging: TO-276
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N8033-GA
|
GeneSiC Semiconductor | 类似代替 | TO-276 |
肖特基二极管与整流器 650V, 5A, 225 Deg C
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review