Technical parameters/peak pulse power: 500 W
Technical parameters/minimum reverse breakdown voltage: 9.93 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: B
External dimensions/packaging: B
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JAN1N6107
|
Microchip | 完全替代 | Axial |
双向瞬态抑制器 BIDIRECTIONAL TRANSIENT SUPPRESSORS
|
||
JAN1N6107
|
Semtech Corporation | 完全替代 | Axial |
双向瞬态抑制器 BIDIRECTIONAL TRANSIENT SUPPRESSORS
|
||
|
|
Semtech Corporation | 完全替代 | Axial |
双向瞬态抑制器 BIDIRECTIONAL TRANSIENT SUPPRESSORS
|
||
|
|
Microsemi | 完全替代 | B |
双向瞬态抑制器 BIDIRECTIONAL TRANSIENT SUPPRESSORS
|
||
JANTXV1N6107
|
Microchip | 完全替代 |
双向瞬态抑制器 BIDIRECTIONAL TRANSIENT SUPPRESSORS
|
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