Technical parameters/rated power: 500 W
Technical parameters/breakdown voltage: 31.4 V
Technical parameters/dissipated power: 500 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SMT
External dimensions/packaging: SMT
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microchip | 类似代替 | Bulk |
ESD Suppressors / TVS Diodes TVS BI 500W 31.4V SM
|
||
JANS1N6118AUS
|
Semtech Corporation | 完全替代 | SMT |
ESD 抑制器/TVS 二极管 T MET BI 500W 33V JANS US
|
||
JANTXV1N6118AUS
|
Semtech Corporation | 完全替代 | SMT |
ESD 抑制器/TVS 二极管 T MET BI 500W 33V
|
||
JANTXV1N6118AUS
|
Microsemi | 完全替代 | SQ-MELF |
ESD 抑制器/TVS 二极管 T MET BI 500W 33V
|
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