Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 3 V
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Motorola | 类似代替 | CASE 299 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
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Leshan Radio | 类似代替 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
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TAK Cheong | 类似代替 | DO-204 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
||
1N4372A
|
Central Semiconductor | 类似代替 | DO-35 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
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|
Rectron Semiconductor | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
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Philips | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
|||
1N5225B
|
NTE Electronics | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
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1N5225B
|
ON Semiconductor | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
1N5225B
|
Fairchild | 完全替代 | DO-204AH |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
1N5225B
|
Motorola | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
|
1N5225B
|
先科ST | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5225B 单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C
|
||
1N5225B(DO-35)
|
Microsemi | 类似代替 | DO-204AH |
DIODE ZENER 3V 0.5W(1/2W) DO35
|
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