Technical parameters/tolerances: ±5 %
Technical parameters/forward voltage: 1.2V @1A
Technical parameters/dissipated power: 5 W
Technical parameters/test current: 25 mA
Technical parameters/voltage regulation value: 47 V
Technical parameters/forward voltage (Max): 1.2V @1A
Technical parameters/rated power (Max): 5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: T-18-2
External dimensions/packaging: T-18-2
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5368B
|
Diotec Semiconductor | 类似代替 | DO-201 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
1N5368B
|
Semikron | 类似代替 | DO-201 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
|
|
Motorola | 类似代替 | DO-201AE |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
1N5368B
|
NTE Electronics | 类似代替 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
|||
1N5368B
|
ON Semiconductor | 类似代替 | DO-35-2 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
1N5368B
|
Microsemi | 类似代替 | T-18 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
1N5368B
|
Multicomp | 类似代替 | DO-201AE |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
1N5368B
|
Gaomi Xinghe Electronics | 类似代替 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
|||
1N5368B
|
Vishay Semiconductor | 类似代替 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
|||
1N5368B
|
Sunmate | 类似代替 | DO-201AD |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
||
1N5368B
|
Transys Electronics | 类似代替 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
|||
1N5368B
|
New Jersey Semiconductor | 类似代替 |
硅5瓦齐纳二极管 SILICON 5 WATT ZENER DIODES
|
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