Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/tolerances: ±5 %
Technical parameters/rated power: 500 mW
Technical parameters/forward voltage: 1.2V @200mA
Technical parameters/dissipated power: 500 mW
Technical parameters/test current: 4.2 mA
Technical parameters/voltage regulation value: 30 V
Technical parameters/forward voltage (Max): 1.2V @200mA
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35-2
External dimensions/length: 4.56 mm
External dimensions/width: 1.91 mm
External dimensions/height: 1.91 mm
External dimensions/packaging: DO-35-2
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Panjit | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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Motorola | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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先科ST | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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CHENG-YI | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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New Jersey Semiconductor | 完全替代 | 2 |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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Microchip | 完全替代 | DO-7 |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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Philips | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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1N5256B
|
Microsemi | 完全替代 | DO-204AH |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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1N5256B
|
Rectron Semiconductor | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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1N5256B
|
Fairchild | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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1N5256B
|
NTE Electronics | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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1N5256B
|
Freescale | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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1N5256B
|
ST Microelectronics | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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1N5256B
|
Vishay Semiconductor | 完全替代 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5256B 单管二极管 齐纳, 30 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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