Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5239B
|
Fairchild | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5239B 单管二极管 齐纳, 9.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5239B
|
DC Components | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N5239B 单管二极管 齐纳, 9.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
1N5239B
|
Panjit | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5239B 单管二极管 齐纳, 9.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5239B
|
ON Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5239B 单管二极管 齐纳, 9.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5239B
|
CHENG-YI | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N5239B 单管二极管 齐纳, 9.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
1N5239B
|
Central Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5239B 单管二极管 齐纳, 9.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5239B
|
Microsemi | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5239B 单管二极管 齐纳, 9.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5239B-TAP
|
Vishay Semiconductor | 完全替代 | DO-35-2 |
稳压二极管 9.1 Volt 0.5W 5%
|
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