Technical parameters/tolerances: ±5 %
Technical parameters/breakdown voltage: 5.1 V
Technical parameters/number of pins: 2
Technical parameters/forward voltage: 1.1 V
Technical parameters/dissipated power: 500 mW
Technical parameters/thermal resistance: 300K/W (RθJA)
Technical parameters/test current: 20 mA
Technical parameters/forward current: 200 mA
Technical parameters/voltage regulation value: 5.1 V
Technical parameters/forward voltage (Max): 1.1 V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/working junction temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/length: 3.9 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: DO-35
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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ATMEL | 类似代替 |
VISHAY 1N5231B 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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Rectron Semiconductor | 类似代替 | DO-35 |
VISHAY 1N5231B 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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先科ST | 类似代替 | DO-35 |
VISHAY 1N5231B 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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1N5231B
|
Vishay Semiconductor | 类似代替 | DO-35 |
VISHAY 1N5231B 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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1N5231B
|
DC Components | 类似代替 |
VISHAY 1N5231B 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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1N5231B
|
PANJIT Touch Screens | 类似代替 | DO-35 |
VISHAY 1N5231B 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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1N5231B
|
New Jersey Semiconductor | 类似代替 |
VISHAY 1N5231B 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
1N5231B
|
ST Microelectronics | 类似代替 | DO-35 |
VISHAY 1N5231B 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5231B
|
Philips | 类似代替 |
VISHAY 1N5231B 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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1N5231B
|
Mostek | 类似代替 |
VISHAY 1N5231B 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
1N5231B
|
Major Brands | 类似代替 | DO-35 |
VISHAY 1N5231B 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5231B
|
Motorola | 类似代替 | DO-35 |
VISHAY 1N5231B 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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1N5231B.TR
|
Fairchild | 类似代替 | DO-35 |
DIODE 5.1V, 0.5W(1/2W), SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, GLASS PACKAGE-2, Voltage Regulator Diode
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1N5231BTR
|
Fairchild | 功能相似 | DO-35-2 |
FAIRCHILD SEMICONDUCTOR 1N5231BTR 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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1N5231BTR
|
Central Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5231BTR 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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1N5231BTR
|
ON Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5231BTR 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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1N5231BTR
|
Vishay Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5231BTR 单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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