Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 3.9 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Philips | 完全替代 |
单管二极管 齐纳, 3.9 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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先科ST | 完全替代 | DO-35 |
单管二极管 齐纳, 3.9 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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Central Semiconductor | 完全替代 | DO-35 |
单管二极管 齐纳, 3.9 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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Rectron | 完全替代 | DO-204AH |
单管二极管 齐纳, 3.9 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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Rectron Semiconductor | 完全替代 | DO-35 |
单管二极管 齐纳, 3.9 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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Taitron | 完全替代 | DO-35 |
单管二极管 齐纳, 3.9 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5228B
|
Surge Components | 完全替代 |
单管二极管 齐纳, 3.9 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
1N5228B
|
ON Semiconductor | 完全替代 | DO-35 |
单管二极管 齐纳, 3.9 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5228B
|
EIC | 完全替代 | DO-35 |
单管二极管 齐纳, 3.9 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5228B
|
DC Components | 完全替代 |
单管二极管 齐纳, 3.9 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
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1N5228B
|
Microsemi | 完全替代 | DO-35 |
单管二极管 齐纳, 3.9 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5228B
|
Vishay Semiconductor | 完全替代 | DO-35 |
单管二极管 齐纳, 3.9 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5228B-T
|
Rectron | 功能相似 | DO-35 |
1N5228B 系列 500 mW 3.3 V 200 mA 通孔 外延 齐纳二极管 - DO-35
|
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1N5228BRL
|
ON Semiconductor | 功能相似 | DO-35 |
3.9V, 0.5W(1/2W), SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204Ah, HERMETIC SEALED, GLASS, DO-35, 2Pin
|
||
1N5228BTAP
|
Vishay Semiconductor | 功能相似 | DO-35 |
Diode Zener Single 3.9V 5% 0.5W(1/2W) Automotive 2Pin DO-35 Ammo
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