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Model 1N486B_T50R

Description DIODE GEN PURP 250V 200mA DO35

Brand: ON Semiconductor

Packaging DO-204AH

Delivery time

Packaging method

Standard packaging quantity 1

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Technical parameters/forward voltage: 1V @100mA

Technical parameters/operating temperature: 175℃ (Max)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: DO-204AH

External dimensions/packaging: DO-204AH

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: lead-free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
1N486B	NTE Electronics	功能相似		二极管小信号, 单, 250 V, 200 mA, 1 V, 4 A	PDF
1N486B	Rochester	功能相似	DO-35	二极管小信号, 单, 250 V, 200 mA, 1 V, 4 A	PDF
1N486B	Microsemi	功能相似	DO-35	二极管小信号, 单, 250 V, 200 mA, 1 V, 4 A	PDF
1N486B	Fairchild	功能相似	DO-35	二极管小信号, 单, 250 V, 200 mA, 1 V, 4 A	PDF

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