Technical parameters/tolerances: ±5 %
Technical parameters/number of pins: 2
Technical parameters/forward voltage: 1.2 V
Technical parameters/dissipated power: 1.3 W
Technical parameters/thermal resistance: 110K/W (RθJA)
Technical parameters/test current: 31 mA
Technical parameters/forward current: 200 mA
Technical parameters/voltage regulation value: 8.2 V
Technical parameters/rated power (Max): 1.3 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/working junction temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 1300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-41
External dimensions/length: 4.1 mm
External dimensions/height: 4.1 mm
External dimensions/packaging: DO-41
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N4738ATR
|
ON Semiconductor | 功能相似 | DO-41 |
FAIRCHILD SEMICONDUCTOR 1N4738ATR 齐纳二极管, VZ:8.2V
|
||
|
|
VISHAY | 类似代替 | DO-41 |
稳压二极管 8.2 Volt 1.3 Watt 5%
|
||
ZPY8V2-TAP
|
Vishay Semiconductor | 类似代替 | DO-41 |
稳压二极管 8.2 Volt 1.3 Watt 5%
|
||
ZPY8V2-TR
|
Vishay Semiconductor | 类似代替 | DO-41 |
1.3mW,ZPY 系列,Vishay Semiconductor 硅平面齐纳二极管(电源) 适用于稳定和削波电路的应用,带有高额定功率 ### 齐纳二极管,Vishay Semiconductor
|
||
ZPY8V2-TR
|
Vishay Siliconix | 类似代替 |
1.3mW,ZPY 系列,Vishay Semiconductor 硅平面齐纳二极管(电源) 适用于稳定和削波电路的应用,带有高额定功率 ### 齐纳二极管,Vishay Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review