Technical parameters/number of pins: 2
Technical parameters/forward voltage: 1V @10mA
Technical parameters/dissipated power: 500 mW
Technical parameters/thermal resistance: 300℃/W (RθJA)
Technical parameters/reverse recovery time: 4 ns
Technical parameters/forward current: 200 mA
Technical parameters/Maximum forward surge current (Ifsm): 4 A
Technical parameters/forward voltage (Max): 1 V
Technical parameters/forward current (Max): 400 mA
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: 175℃ (Max)
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/height: 4.56 mm
External dimensions/packaging: DO-35
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: industry
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microchip | 功能相似 | 2 |
电脑二极管 COMPUTER DIODE
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New Jersey Semiconductor | 功能相似 | 2 |
电脑二极管 COMPUTER DIODE
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1N4454
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Semtech Corporation | 功能相似 | DO-35 |
电脑二极管 COMPUTER DIODE
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1N4454_T50R
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Fairchild | 类似代替 | DO-35 |
DIODE GEN PURP 50V 200mA DO35
|
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