Technical parameters/load current: 200 mA
Technical parameters/forward voltage: 720mV @5mA
Technical parameters/dissipated power: 500 mW
Technical parameters/reverse recovery time: 8 ns
Technical parameters/Maximum forward surge current (Ifsm): 2 A
Technical parameters/forward current (Max): 150 mA
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: 175℃ (Max)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/length: 3.9 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: DO-35
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Semiconductor | 功能相似 |
SMALL SIGNAL DIODE,SWITCHING,DO-35,0.5W(1/2W),75V,ROHS,10K
|
|||
|
|
Diodes | 功能相似 | DO-35 |
SMALL SIGNAL DIODE,SWITCHING,DO-35,0.5W(1/2W),75V,ROHS,10K
|
||
1N4448TR
|
Vishay Intertechnology | 类似代替 |
500 mW 小信号快速开关二极管、100 V、4 ns、DO-35
|
|||
1N4448TR
|
Fairchild | 类似代替 | DO-35 |
500 mW 小信号快速开关二极管、100 V、4 ns、DO-35
|
||
1N4448TR
|
VISHAY | 类似代替 | DO-35-2 |
500 mW 小信号快速开关二极管、100 V、4 ns、DO-35
|
||
1N4448TR
|
Vishay Semiconductor | 类似代替 | DO-35 |
500 mW 小信号快速开关二极管、100 V、4 ns、DO-35
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review