Technical parameters/forward voltage: 1.1 V
Technical parameters/reverse recovery time: 2000 ns
Technical parameters/Maximum reverse voltage (Vrrm): 800 V
Technical parameters/forward current: 1 A
Technical parameters/maximum reverse leakage current (Ir): 5 uA
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-41
External dimensions/packaging: DO-41
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Gulfsemi | 功能相似 | DO-41 |
FAIRCHILD SEMICONDUCTOR 1N4006 标准功率二极管, 单, 800 V, 1 A, 1.1 V, 30 A
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Fagor Electronica | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N4006 标准功率二极管, 单, 800 V, 1 A, 1.1 V, 30 A
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1N4006
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Diotec Semiconductor | 功能相似 | DO-204 |
FAIRCHILD SEMICONDUCTOR 1N4006 标准功率二极管, 单, 800 V, 1 A, 1.1 V, 30 A
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1N4006
|
ON Semiconductor | 功能相似 | DO-204AL |
FAIRCHILD SEMICONDUCTOR 1N4006 标准功率二极管, 单, 800 V, 1 A, 1.1 V, 30 A
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||
1N4006
|
NTE Electronics | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N4006 标准功率二极管, 单, 800 V, 1 A, 1.1 V, 30 A
|
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1N4006
|
Arduino | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N4006 标准功率二极管, 单, 800 V, 1 A, 1.1 V, 30 A
|
|||
1N4006
|
Taiwan Semiconductor | 功能相似 | DO-41 |
FAIRCHILD SEMICONDUCTOR 1N4006 标准功率二极管, 单, 800 V, 1 A, 1.1 V, 30 A
|
||
1N4006
|
Major Brands | 功能相似 | DO-41 |
FAIRCHILD SEMICONDUCTOR 1N4006 标准功率二极管, 单, 800 V, 1 A, 1.1 V, 30 A
|
||
|
1N4006
|
Vishay Intertechnology | 功能相似 | DO-41 |
FAIRCHILD SEMICONDUCTOR 1N4006 标准功率二极管, 单, 800 V, 1 A, 1.1 V, 30 A
|
||
|
1N4006
|
Hitano | 功能相似 | DO-41 |
FAIRCHILD SEMICONDUCTOR 1N4006 标准功率二极管, 单, 800 V, 1 A, 1.1 V, 30 A
|
||
|
1N4006GPHE3/54
|
VISHAY | 完全替代 | DO-204AL |
Diode Switching 800V 1A 2Pin DO-204AL T/R
|
||
1N4006GPHE3/73
|
Vishay Semiconductor | 类似代替 | DO-41-2 |
整流器 RECOMMENDED ALT 78-BYT51K-TAP
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