Technical parameters/forward voltage: 1V @1A
Technical parameters/reverse recovery time: 2 µs
Technical parameters/forward voltage (Max): 1V @1A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-204AL
External dimensions/length: 5.2 mm
External dimensions/width: 2.7 mm
External dimensions/height: 2.7 mm
External dimensions/packaging: DO-204AL
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N3612GP-E3/54
|
VISHAY | 完全替代 | DO-204AL |
1A,高达 450V 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
||
1N3612GP-E3/54
|
Vishay Semiconductor | 完全替代 | DO-204AL |
1A,高达 450V 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
||
1N4936
|
Taiwan Semiconductor | 功能相似 | DO-41 |
Rectifier Diode, 1Element, 1A, 400V V(RRM), Silicon, DO-41
|
||
|
|
NTE Electronics | 功能相似 | 2 |
Rectifier Diode, 1Element, 1A, 400V V(RRM), Silicon, DO-41
|
||
|
|
General Semiconductor | 功能相似 |
Rectifier Diode, 1Element, 1A, 400V V(RRM), Silicon, DO-41
|
|||
1N4936
|
Multicomp | 功能相似 | DO-41 |
Rectifier Diode, 1Element, 1A, 400V V(RRM), Silicon, DO-41
|
||
|
|
LiteOn | 功能相似 | DO-41 |
Rectifier Diode, 1Element, 1A, 400V V(RRM), Silicon, DO-41
|
||
1N4936
|
ON Semiconductor | 功能相似 | DO-204AL |
Rectifier Diode, 1Element, 1A, 400V V(RRM), Silicon, DO-41
|
||
1N4936
|
DIYI Electronic | 功能相似 | DO-41 |
Rectifier Diode, 1Element, 1A, 400V V(RRM), Silicon, DO-41
|
||
1N4936
|
Semikron | 功能相似 |
Rectifier Diode, 1Element, 1A, 400V V(RRM), Silicon, DO-41
|
|||
1N4936
|
Leshan Radio | 功能相似 | DO-41 |
Rectifier Diode, 1Element, 1A, 400V V(RRM), Silicon, DO-41
|
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